b2 - 22 ? 2000 ixys all rights reserved c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad features international standard package jedec to-247 ad high current igbt and paralled fred in one package low leakage current fred newest generation hdmos tm process mos gate turn-on - drive simplicity applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies advantages high power density (two devices in one package) switching speed for high frequency applications easy to mount with 1 screw, (isolated mounting screw hole) 97508c (6/98) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 300 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = 0.8 v ces t j = 25 c 200 a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.4 v v ces = 300 v i c25 = 60 a v ce(sat) = 2.4 v t fi = 75 ns IXGH40N30BD1 symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v cgr t j = 25 c to 150 c; r ge = 1 m 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c60a i c90 t c = 90 c40a i cm t c = 25 c, 1 ms 160 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 80 a (rbsoa) clamped inductive load, l = 30 h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (m3) 1.13/10 nm/lb.in. hiperfast tm igbt ixys reserves the right to change limits, test conditions, and dimensions.
b2 - 23 ? 2000 ixys all rights reserved remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 20 28 s pulse test, t 300 s, duty cycle 2 % c ies 2500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 210 pf c res 60 pf q g 145 170 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 23 35 nc q gc 50 75 nc t d(on) 25 ns t ri 45 ns t d(off) 75 ns t fi 75 ns e off 0.3 mj t d(on) 25 ns t ri 45 ns e on 0.5 mj t d(off) 90 180 ns t fi 130 230 ns e off 0.6 1.4 mj r thjc 0.62 k/w r thck 0.25 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 4.7 ? inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 4.7 ? reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, 1.8 v pulse test, t 300 s, duty cycle d 2 % i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s 1.5 1.8 a v r = 100 v; t j =100 c t rr i f = 1 a; -di/dt = 100 a/ s; v r = 30 v t j =25 c30 ns r thjc 1k/w to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 IXGH40N30BD1 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
b2 - 24 ? 2000 ixys all rights reserved v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ge - volts 2345678910 i c - amperes 0 20 40 60 80 100 v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 11v 9v 7v v ce = 10v t j = 25 c v ge = 15v t j = 25 c i c = 20a i c = 40a i c = 80a t j = 125 c c rss f = 1mhz 5v 5v v ge = 15v t j = 25 c v ce - volts 012345 i c - amperes 0 20 40 60 80 100 t j = 125 c c iss c oss v ge = 15v 13v 11v v ge = 15v 13v 11v 5v 7v 7v 13v 9 v 9v IXGH40N30BD1 fig. 1. output characteristics fig. 2. extended output characteristics fig. 3. high temperature output characteristics fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6. capacitance curves )
b2 - 25 ? 2000 ixys all rights reserved i c - amperes 0 20406080 e (off) - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 e (on) - millijoules 0.00 0.25 0.50 0.75 1.00 1.25 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 v ce - volts 0 50 100 150 200 250 300 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 25 50 75 100 125 150 175 v ge - volts 0 3 6 9 12 15 18 r g - ohms 0 102030405060 e (off) - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e (on) - millijoules 0.00 0.25 0.50 0.75 1.00 1.25 1.50 v ce = 150v i c = 40a e (off) e (off) t j = -55 to +125 c r g = 4.7 w dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle r g = 4.7 w t j = 125 c e (on) i c = 80a e (off) t j = 125 c i c = 40a e (on) i c = 20a e (off) e (on) e (on) d=0.2 IXGH40N30BD1 fig. 7. dependence of e on and e off on i c . fig. 8. dependence of e on and e off on r g . fig. 9. gate charge fig. 10. turn-off safe operating area fig. 11. transient thermal resistance
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